Self-organization of Ge Islands on Si (113)

Self-assembling and self-ordering of Ge islands on vicinal Si(001) surfaces

Fabrication of semiconductor quantum dot structures with a regular in-plane spatial distribution and optimum size uniformity is highly desirable for applications of their novel optical and electronic properties. This remains a challenging subject, especially on the nanometer scale. The strain-driven self-assembled formation of Ge islands on Si during molecular beam epitaxy (MBE) in the Stranski...

Perfect alignment of self-organized Ge islands on pre-grown Si stripe mesas

Self-organized Ge islands grown on patterned Si(001) substrates have been investigated. Selective epitaxial growth (SEG) of Si is carried out with gas-source molecular beam epitaxy to form Si stripe mesas followed by subsequent Ge island growth. Self-aligned Ge islands with regular spacing are formed on the 〈110〉-oriented ridges of the Si mesas. The regular spacing is driven by the repulsive in...

Controlled arrangement of self-organized Ge islands on patterned Si „001... substrates

We report the ability to arrange self-organized Ge islands on patterned Si ~001! substrates. Selective epitaxial growth of Si is carried out with gas-source molecular beam epitaxy to form Si mesas followed by subsequent Ge growth. Self-aligned and regularly spaced Ge islands are formed on the ^110&-oriented ridges of the Si stripe mesas. A mono-modal size distribution of the islands has been ob...

Strain relaxation in self-assembled Ge(Si)/Si quantum dots

Modification of Si(100) Substrate Bonding by Adsorbed Ge or Si Dimer Islands

High-resolution scanning tunneling microscopy studies of the Sis100d-s2 3 1d surface show a heretofore unrecognized distortion of the substrate structure when islands form during the initial stage of growth of either Si or Ge. The distortion, reflecting the influence of strain, extends at least three dimers away from the adsorption sites. We present a realistic structural model. [S0031-9007(98)...